Aligned with the industry’s 800 VDC Roadmap to Enable Gigawatt-Scale AI InfrastructureSanta Clara, CA and Kyoto, Japan, Oct. 13, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the release of a new white paper detailing advanced power solutions for AI data centers based on the novel 800 VDC architecture, reinforcing its role as a key semiconductor industry player in driving system innovation. As part of the collaboration announced in June 2025, the white paper outlines optimal power strategies t ...

Santa Clara, CA and Kyoto, Japan, Oct. 13, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the release of a new white paper detailing advanced power solutions for AI data centers based on the novel 800 VDC architecture, reinforcing its role as a key semiconductor industry player in driving system innovation. As part of the collaboration announced in June 2025, the white paper outlines optimal power strategies that support large-scale 800 VDC power distribution across AI infrastructure. The 800 V ...

ROHM at electronica India 2025 electronica India 2025 is the ideal platform to showcase real-world applications enabled by ROHM’s advanced power semiconductors. ROHM's Power Eco Family Contributes to next-Generation ecosystems. Santa Clara, CA and Bengaluru, India, Aug. 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced from September 17th to 19th, it will particpate in electronica India 2025, South Asia's premier trade fair for electronic components, systems, applications, and solution ...

文章核心观点 随着人工智能发展，数据中心基础设施需同步演进，罗姆作为功率半导体技术领导者，为英伟达新800V高压直流（HVDC）架构提供关键硅技术支持，助力更高效、可扩展和可持续的人工智能工厂建设 [1] 公司产品组合 - 公司功率器件组合涵盖硅和宽带隙技术，包括碳化硅（SiC）和氮化镓（GaN），为数据中心设计师提供战略路径 [2] - 公司硅MOSFET已广泛应用于汽车和工业领域，能平衡价格、效率和可靠性，适合人工智能基础设施发展过渡阶段 [2] 公司产品案例 - RY7P250BM是一款100V功率MOSFET，获全球主要云服务提供商认可，专为48V电源系统热插拔电路设计，可降低功率损耗、提高系统可靠性 [3] 公司产品与英伟达架构契合点 - 公司SiC器件在工业级低损耗整流方面表现出色，契合英伟达大规模部署800V HVDC数据中心架构以驱动1MW计算机架及以上的计划 [4] - 公司SiC MOSFET在高压、高功率环境中性能优越，能降低开关和传导损耗，提高效率，与英伟达800V HVDC架构要求完美契合 [5] 公司氮化镓技术进展 - 公司以EcoGaN™品牌推进氮化镓技术，在100V至650V范围内性能卓越，其专有纳米脉冲控制技术可进一步改善开关性能 [6] 公司高功率模块情况 - 公司提供一系列高功率SiC模块，如HSDIP20，适用于英伟达架构中的集中式电源系统，具备强大热性能和可扩展性 [7] 公司合作态度 - 公司致力于与英伟达等行业领导者、数据中心运营商和电源系统设计师密切合作，为下一代人工智能工厂提供基础硅技术 [8]